Electronics or Semiconductor Device Essay

Electronics or Semiconductor Device Essay
Electronics or Semiconductor Device Essay
1. Which of the following is not a
semiconductor? [SSC 2017]
(a) Silicon
(b) Krypton
(c) Selenium
(d) Germanium
2. Which one of the following is not a
semiconductor? [CDS 2017]
(a) Silicon (b) Germanium
(c) Quartz (d) Gallium arsenide
3. Silicon is which type of material?
[RRB 2017]
(a) Semiconductor
(b) Insulator
(c) Conductor
(d) No option is correct
4. Which of the following is widely used in
making semiconductor chips?
[SSC 2017]
(a) Radium (b) Sodium
(c) Germanium (d) Sulphur
5. When a piece of pure silicon is doped
with aluminium, then [CDS 2017]
(a) the conductivity of the doped silicon
piece will remain the same.
(b) the doped silicon piece will become
n-type.
(c) the doped silicon piece will become
p-type.
(d) the resistivity of the doped silicon
piece will increase.
6. The majority charge carriers in a p-type
semiconductor are [NDA 2017]
(a) free electrons
(b) conduction electrons
(c) ions
(d) holes
7. In a n-type semiconductor
(a) electrons are the only carriers.
(b) holes are the only carriers.
(c) electrons are the majority carriers
and holes are the minority carriers.
(d) None of the above
8. Assertion (A) An N-type semiconductor
has a large number of electrons but still it
is electrically neutral.
Reason (R) AnN-type semiconductor is
obtained by doping an intrinsic
semiconductor with a pentavalent
impurity.
Codes
(a) Both A and R are true and R is the
correct explanation of A
(b) Both A and R are true, but R is not the
correct explanation of A
(b) A is true, but R is false
(d) A is false, but R is true
9. Match the following.
List I List II
A. Germanium at
0 K
1. n-type
semiconductor
B. Germanium at
room temperature
2. p-type
semiconductor
C. Germanium
doped with indium
3. Insulator
D. Germanium
doped with
arsenic
4. Intrinsic
semiconductor
Codes
A B C D
(a) 1 2 3 4
(b) 4 3 2 1
(c) 3 4 2 1
(d) 4 3 1 2
10. The reverse biasing in a p-n junctions
diode
(a) decrease the potential barrier.
(b) increase the potential barrier.
(c) increase the number of minority
charge carries.
(d) increases the number of majority
charge carries.
11. In p − n junction, avalanche current
flows in circuit when biasing is
(a) forward (b) reverse
(c) zero (d) excess
12. Avalanche breakdown is due to
(a) collision of minority charge carrier.
(b) increase in depletion layer thickness.
(c) decrease in depletion layer
thickness.
(d) None of the above
13. The p − n junction diode is used as
(a) An amplifier (b) A rectifier
(c) An oscillator (d) A modulator
14. Consider the following statements.
I. A p n − junction diode is a basic
semiconductor device.
II. A p n − junction diode can work as
excellent rectifier.
III. The p n − junction diode cannot be
used as a half-wave rectifier.
Which of the statements given above
is/are correct?
(a) Only I (b) Only III
(c) I and II (d) All of these
15. The full form of LED is [NDA 2018]
(a) Light Emitting Diode
(b) Light Emitting Device
(c) Light Enhancing Device
(d) Light Enhancing Diode
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